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Defects and Impurities in Silicon Materials : an Introduction to Atomic-Level Silicon Engineering

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This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.

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Detail Information

Series Title

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Call Number

553.6

Publisher

Tokyo : Springer., 2015

Collation

498 pages

Language

English

ISBN/ISSN

9784431558002

Classification

553.6

Content Type

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Media Type

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Carrier Type

online resource

Edition

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Subject(s)

Silicon

Specific Detail Info

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Statement of Responsibility

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Other Information

Cataloger

Kurnadi

Source

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Validator

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