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Advances in Noise Analysis, Mitigation and Control

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The chapter is intended to provide the reader with means to reduce low‐frequency noise
in Metal‐Oxide‐Semiconductor Field‐Effect‐Transistor (MOSFET). It is demonstrated
that low‐resistivity source and drain electrodes can greatly lower the low‐frequency
noise level by suppressing their contribution to the total noise

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Series Title

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Call Number

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Publisher

: IntechOpen,., 2016

Collation

256

Language

English

ISBN/ISSN

9789535126751

Classification

NONE

Content Type

text

Media Type

computer

Carrier Type

online resource

Edition

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Subject(s)

Noise Analysis, Mitigation and Control

Specific Detail Info

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Statement of Responsibility

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Other Information

Cataloger

Angga

Source

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Validator

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Digital Object Identifier (DOI)

https://mts.intechopen.com/storage/books/5240/authors_book/authors_book.pdf

Journal Volume

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Journal Issue

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Subtitle

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Parallel Title

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