Electronic Resource

AlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications

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This work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.

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Availability

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Detail Information

Series Title

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Call Number

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Publisher

: KIT Scientific Publishing., 2011

Collation

230 hlm; ill., lamp.,

Language

English

ISBN/ISSN

9783866446151

Classification

NONE

Content Type

text

Media Type

computer

Carrier Type

other (audio)

Edition

-

Subject(s)

Technology: general issues

Specific Detail Info

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Statement of Responsibility

Kühn, Jutta

Other Information

Cataloger

ida

Source

https://directory.doabooks.org/handle/20.500.12854/40629

Validator

-

Digital Object Identifier (DOI)

10.5445/KSP/1000021579

Journal Volume

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Journal Issue

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Subtitle

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Parallel Title

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