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Strain-Engineered MOSFETs

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This book brings together new developments in the area of strain-engineered MOSFETs using high-mibility substrates such as SIGe, strained-Si, germanium-on-insulator and III-V semiconductors into a single text which will cover the materials aspects, principles, and design of advanced devices, their fabrication and applications. The book presents a full TCAD methodology for strain-engineering in Si CMOS technology involving data flow from process simulation to systematic process variability simulation and generation of SPICE process compact models for manufacturing for yield optimization.

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Detail Information

Series Title

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Call Number

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Publisher

Boca Raton : CRC Press., 2013

Collation

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Language

English

ISBN/ISSN

9781466500556

Classification

NONE

Content Type

text

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Carrier Type

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Edition

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Subject(s)

Technology & Engineering / Electronics

Specific Detail Info

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Statement of Responsibility

C.K. Maiti, T.K Maiti

Other Information

Cataloger

Kholif Basri

Source

https://openresearchlibrary.org/content/152c51d6-f4bf-4cd5-a024-68e55668e9c3

Validator

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Digital Object Identifier (DOI)

https://doi.org/10.1201/9781315216577

Journal Volume

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Journal Issue

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